elektronische bauelemente STT3524C n-ch: 4.1 a, 20 v, r ds(on) 47 m ? p-ch: -3.2 a, -20 v, r ds(on) 79 m ? n & p-channel enhancement mode mos.fet 23-jan-2014 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power m anagement circuitry. typical applications are dc-dc converter s, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features low r ds(on) provides higher efficiency and extends battery life. miniature tsop-6 surface mount package saves board space. package information package mpq leader size tsop-6 3k 7 inch absolute maximum ratings (t a =25 unless otherwise noted) ratings parameter symbol n-channel p-channel unit drain-source voltage v ds 20 -20 v gate-source voltage v gs 8 v ta=25 c 4.1 -3.2 continuous drain current 1 ta=70 c i d 3.3 -2.6 a pulsed drain current 2 i dm 8 -8 a continuous source current (diode conduction) 1 i s 1.05 -1.05 a ta=25 c 1.15 power dissipation 1 ta=70 c p d 0.7 w operating junction and storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings n-channel p-channel parameter symbol typ. max. typ. max. unit t 10 sec Q 93 110 93 110 maximum junction to ambient 1 steady state r ja 130 150 130 150 c / w notes: 1 surface mounted on 1 x 1 fr4 board. 2 pulse width limited by maximum junction temperatu re. millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.6 0 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 2 3 4 5 6 top view
elektronische bauelemente STT3524C n-ch: 4.1 a, 20 v, r ds(on) 47 m ? p-ch: -3.2 a, -20 v, r ds(on) 79 m ? n & p-channel enhancement mode mos.fet 23-jan-2014 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions n-ch 0.4 - - v ds =v gs , i d =250ua gate-threshold voltage p-ch v gs(th) -0.4 - - v v ds =v gs , i d = -250ua n-ch - - 100 v ds =0, v gs =8v gate-body leakage current p-ch i gss - - -100 ua v ds =0, v gs = -8v n-ch - - 1 v ds =16 v, v gs =0 v p-ch - - -1 v ds =-16v, v gs =0 v n-ch - - 10 v ds =16v, v gs =0 v, t j =55 zero gate voltage drain current p-ch i dss - - -10 ua v ds = -16v, v gs =0 v, t j =55 n-ch 5 - - v ds = 5v, v gs =4.5 v on-state drain current 1 p-ch i d(on) -5 - - a v ds = -5v, v gs = -4.5 v n-ch - - 47 v gs =4.5v, i d =4.1a p-ch - - 79 v gs =-4.5v, i d = -3.2a n-ch - - 55 v gs =2.5v, i d =3.8a drain-source on-resistance 1 p-ch r ds(on) - - 110 m v gs =-2.5v, i d = -2.7a n-ch - 10 - v ds = 5v, i d = 4.1a forward transconductance 1 p-ch g fs - 5 - s v ds = -5v, i d = -3.2a n-ch - 0.80 - i s = 1.05a, v gs =0 diode forward voltage 1 p-ch v sd - -0.83 - s i s = -1.05a, v gs =0 dynamic 2 n-ch - 7.5 - total gate charge p-ch q g - 3.8 - n-ch - 0.6 - gate-source charge p-ch q gs - 0.6 - n-ch - 1.0 - gate-drain charge p-ch q gd - 1.5 - nc n-channel v ds =15v, v gs = 4.5v, i d = 4.1a p-channel v ds = -15v, v gs = -4.5v, i d = -3.2a n-ch - 5 - turn-on delay time p-ch t d(on) - 5 - n-ch - 12 - rise time p-ch t r - 15 - n-ch - 13 - turn-off delay time p-ch t d(off) - 20 - n-ch - 7 - fall time p-ch t f - 20 - ns n-channel v dd = 15v, r gen = 15 , v gs = 4.5v, i d = 1a p-channel v dd = -15v, r gen = 15 v gs = -4.5v, i d = -1a notes 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not subject to production t esting.
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